Infineon S29GL128S10DHIV10: A High-Performance 128-Megabit Flash Memory Solution

The Infineon S29GL128S10DHIV10 stands as a robust and reliable 128-megabit (16-megabyte) CMOS flash memory chip, engineered for demanding applications where high-speed performance and data integrity are paramount. This device is part of Infineon's high-performance GL-S MirrorBit® family, offering a versatile storage solution for a wide array of industrial, automotive, and communications systems.

A key feature of this memory chip is its 1.8V core power supply (VCC) with versatile 3.0V I/O voltage (VI/O), enabling it to interface seamlessly with both lower-core-voltage processors and legacy 3V systems. This dual-voltage support enhances its flexibility in complex system designs. Organized as 16,777,216 words of 8 bits each or 8,388,216 words of 16 bits each, it provides ample storage for boot code, operating systems, and application data.

The S29GL128S10DHIV10 delivers impressive speed, boasting fast access times as low as 90ns and supporting a burst read mode for high-bandwidth data streaming. Its advanced sector architecture offers fine granularity with both 4-KB and 64-KB sectors, allowing for efficient memory management. Hardware and software data protection mechanisms, including a temporary sector unprotect feature, safeguard critical code from inadvertent corruption.

Designed for resilience, this component operates over the industrial temperature range (-40°C to +85°C), ensuring stable performance in harsh environments. Its 64-ball Fortified BGA package offers a compact footprint and robust mechanical reliability. Programming and erasure are achieved through a simple command sequence, making it straightforward to integrate and update in the field.

In summary, the Infineon S29GL128S10DHIV10 is a top-tier choice for developers seeking a high-density, high-speed, and secure non-volatile memory solution.

ICGOODFIND: A superior memory IC offering an optimal blend of high density, fast access, flexible voltage operation, and robust data protection for critical embedded systems.

Keywords: Flash Memory, High-Speed Performance, 1.8V Core Voltage, Industrial Temperature Range, Data Protection