Infineon IRF7343TRPBF Dual MOSFET: Features, Applications, and Technical Specifications
The Infineon IRF7343TRPBF is a highly integrated dual N-channel and P-channel MOSFET in a compact SO-8 package, designed to maximize efficiency and save board space in modern power electronics. This component combines two MOSFETs with complementary channel types, making it an ideal solution for a wide range of switching applications.
Key Features
One of the standout attributes of the IRF7343TRPBF is its high efficiency and low power dissipation, achieved through low on-state resistance (RDS(on))—typically 28 mΩ for the N-channel and 65 mΩ for the P-channel at 10V—which minimizes conduction losses. The device is optimized for high-speed switching, reducing switching losses in applications operating at elevated frequencies. Housed in a space-saving SO-8 package, it is perfect for compact designs. Additionally, it features low gate charge, which enhances driving efficiency and simplifies gate driver design.
Primary Applications
This dual MOSFET is widely used in DC-DC converter circuits, including synchronous buck and boost converters, where the complementary pair efficiently handles switching and synchronous rectification. It is also commonly employed in motor control systems for driving small motors in automotive and industrial settings, as well as in power management modules for portable devices, laptops, and servers. Other applications include load switching, battery protection circuits, and OR-ing functionality.
Technical Specifications
- Dual MOSFET Configuration: One N-channel and one P-channel in a single package.
- Voltage Ratings: 55V for the N-channel (VDS), -55V for the P-channel.
- Continuous Drain Current (ID): 6.5A for the N-channel, -4.3A for the P-channel.
- On-Resistance (RDS(on)): N-channel: 28 mΩ max at 10V; P-channel: 65 mΩ max at -10V.
- Gate Threshold Voltage (VGS(th)): Between 1V and 2V for both channels.
- Package: Standard SO-8, ensuring easy assembly and thermal performance.
The Infineon IRF7343TRPBF stands out for its integration, efficiency, and versatility, making it a preferred choice for designers aiming to optimize performance and reduce the footprint of power management systems.
Keywords: Dual MOSFET, Power Management, DC-DC Converter, High-Speed Switching, Low RDS(on)
