Infineon IRFB5620PBF 60V N-Channel Power MOSFET: Datasheet, Application Circuit, and Specifications
The Infineon IRFB5620PBF is a high-performance N-Channel Power MOSFET designed to deliver exceptional efficiency and robustness in a wide range of power switching applications. Leveraging Infineon's advanced HEXFET® technology, this MOSFET is engineered to offer very low on-state resistance and high switching speed, making it an ideal choice for demanding circuits in industrial, automotive, and consumer electronics.
Key Specifications
This device is characterized by a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 108A at 25°C, which underscores its capability to handle high-power loads. A standout feature is its extremely low typical on-resistance (RDS(on)) of just 3.3 mΩ at 10 V gate drive. This minimal resistance directly translates to reduced conduction losses and higher overall system efficiency, minimizing heat generation. The MOSFET also features a low gate charge (Qg typical of 110 nC), which ensures fast switching transitions and simplifies drive circuit design.
Typical Application Circuit
A common application for the IRFB5620PBF is in synchronous rectification circuits within switch-mode power supplies (SMPS) and motor control drivers. Below is a simplified example of a half-bridge motor drive circuit:
1. Two IRFB5620PBF MOSFETs are configured in a half-bridge topology.
2. The high-side MOSFET's drain is connected to the input voltage rail (e.g., 48V).
3. The source of the high-side MOSFET is connected to the drain of the low-side MOSFET and the output node driving the motor load.
4. The source of the low-side MOSFET is connected to ground.
5. A dedicated gate driver IC (e.g., IR2110) is essential to provide the necessary voltage level shifting and current to rapidly charge and discharge the MOSFET gates, ensuring efficient and safe switching while preventing shoot-through.
Datasheet Overview
The official datasheet provides comprehensive information necessary for reliable circuit design. Key sections include:
Absolute Maximum Ratings: Defining the limits for parameters like VDS, VGS, and ID to prevent device damage.
Electrical Characteristics: Detailed tables for RDS(on), gate threshold voltage, capacitance, and switching times.
Safe Operating Area (SOA) Graphs: Illustrating the current and voltage boundaries within which the device can operate safely.
Typical Performance Characteristics: Graphs showing how parameters like RDS(on) vary with temperature and gate voltage.
ICGOOODFIND: The Infineon IRFB5620PBF is a superior N-Channel Power MOSFET that excels in high-current, low-voltage applications. Its defining attributes are an extremely low RDS(on) for minimal power loss and a high current handling capability, making it a top-tier component for designers focused on maximizing power conversion efficiency and thermal performance in compact spaces.
Keywords: Power MOSFET, Low RDS(on), HEXFET Technology, Synchronous Rectification, High Current Switching.
